镓在裸Si系和SiO_2/Si系掺杂效应  

Gallium Doping Effect in Bare Silicon System and SiO_2/Si System

作　　者：刘秀喜[1] 薛成山[1] 孙瑛[1] 赵富贤[1] 王显明[1] 李玉国[1] 

机构地区：[1]山东师范大学半导体所,济南250014

出　　处：《物理化学学报》1997年第2期153-157,共5页Acta Physico-Chimica Sinica

基　　金：山东省科委资助

摘　　要：Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .

关 键 词：开管扩镓 镓 硅系 掺杂效应 

分 类 号：TN305.3[电子电信—物理电子学]