CMP工艺流程控制策略综述(英文)  

Overview of CMP Process Control Strategies

作　　者：Lakshmanan Karuppiah Bogdan Swedek Mani Thothadri Wei-yung Hsu Thomas Brezoczky Avi Ravid 

机构地区：[1]Applied Material,TFG Division,Sunnyvale,CA USA

出　　处：《电子工业专用设备》2007年第10期1-9,13,共10页Equipment for Electronic Products Manufacturing

摘　　要：化学机械抛光测量技术和测量技术随着其工艺重要性的日益提高越来越成熟。测量技术在所有类型的化学机械抛光工艺流程控制中扮演了一个重要的角色,并且可以根据所使用的测量技术、其在工艺流程中所处的位置以及类型和产生的数据量以不同的方法实现。本文述评并提出了一些从现场、延伸的现场、综合的测量技术、以及其对工艺流程控制影响所普遍应用的测量技术的例子。并且还提出了65nm以及更小技术节点的测量技术以及工艺流程控制策略,在这些未来的技术中,晶片工艺控制以及每个晶圆片方法调整预计将更加苛刻。Process control and the metrology to support it have gained importance with CMP process increasing maturity. Metrology plays a crucial role in enabling any type of CMP process control, and may be implemented in different ways based on the measurement techniques used, its location in the process flow and the type and amount of data generated. In this paper we review and provide examples of the commonly used metrology, in-situ, extended in-situ, integrated metrology, and its contribution to process control. Also addressed, are the metrology and process control strategies for future technology nodes, 65 nm and smaller, where within wafer process control and recipe adjustment per wafer are expected to be even more critical.

关 键 词：化学机械抛光 测量技术 综合测量 CMP工艺控制趋势 

分 类 号：TN407[电子电信—微电子学与固体电子学]