Te溶液生长半磁半导体Cd_(1-x)Mn_xTe的光学和电学性质研究  

INVESTIGATION OF THE PROPERTIES OF SMSCCd1-xMnxTe CRYSTAL FILMS GROWNRFOM Te-RICH SOLUTION

作　　者：莫要武[1] 吴汶海[1] 

机构地区：[1]上海大学,嘉定校区

出　　处：《应用科学学报》1997年第1期107-111,共5页Journal of Applied Sciences

摘　　要：测量了Ｔｅ溶液生长半磁半导体（ＳＭＳＣ）Ｃｄ１－ＭｎＴｅ的导电类型、电阻率、霍尔迁移率和光致发光（ＰＬ）．测定结果表明，Ｔｅ溶液生长Ｃｄ１－ｘＭｎｘＴｅ晶体质量和稳定性均优于布里奇曼长晶，根据正四面体配位晶场中Ｍｎ２＋３ｄ（４Ｔ１）能级出现在Ｃｄ１－ｘＭｎｘＴｅ禁带中的观点，分析了在０．８５～１．５μｍ范围内红外透射光谱上存在吸收边的原因。The receptivity, conductive type, Hall mobility and photoluminescence (PL) of semimagnetic semiconductor (SMSC) Cd1-aMnxTe crystal films grown from Te-ricb solution were measured. All these results showed that the quality and stability of crystal films grown were better than Cd1-xMnxTe bulk crystal grown by Bridgeman technique. The cause of absorptive edge existing within 0.85 -1.5 μm range in infrared transmittance spectrum was investigated based on the viewpoint that the first excited state (4T1) of Mn2+3d in tetrahedral crystal field appeared in the bandgap of Cd1-xMnxTe crystal.

关 键 词：溶液生长 半磁半导体 光学性质 碲锰镉半导体 

分 类 号：TN304.26[电子电信—物理电子学]