一种新型2×2 SOI热光开关  

A Novel 2×2 SOI Thermo-Optic Switch

作　　者：杨笛[1] 余金中[2] 陈少武[2] 陈媛媛[2] 

机构地区：[1]中央民族大学物理与电子工程学院,北京100081 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《光电子．激光》2007年第11期1280-1282,1285,共4页Journal of Optoelectronics·Laser

基　　金：国家科技部"973"计划资助项目(G2000-03-66);中央民族大学青年教师科研基金资助项目(CUN07A)

摘　　要：设计并制作了一种新型的SOI 2×2马赫-曾德(MZ)热光开关。这种光开关采用了深刻蚀结构的配对多模干涉耦合器,同时,为了保证单模传输和调制,在连接波导和调制臂区域采用了浅刻蚀结构。深刻蚀结构增强了多模干涉耦合器对光场的限制,有利于自映像质量的提高,从而减少了自映像损耗和不均衡度,同时也提高了制作容差。基于强限制配对干涉耦合器的新型热光开关,其插入损耗为-11.0 dB,其中包括光纤-波导耦合损耗-4.3 dB,上升和下降开关时间分别为3.5μs和8.8μs。A novel silicon-on-insulator （SO1） 2 × 2 Mach-Zehnder （MZ） t hermo-optical switch is designed and fabricated, which is based on strongly guided paired multimode interference couplers and single-mode connecting waveguides and phaseshifting arms. The multimode-interference couplers are deeply etched to improve coupler characteristics such as self-imaging quality, uniformity,and fabrication tolerance. The novel switch achieves good characteristics,including the low insertion loss of - 11.0 dB which embraces the fiber-waveguide coupling loss of 4.3 dB and the fast response-speed which is measured to be 3.5 and 8.8/μs for raise and fall switching time,respectively.

关 键 词：热光开关 配对多模干涉耦合器 SOI 开关时间 

分 类 号：TN253[电子电信—物理电子学]