功率MOSFET并联驱动特性分析  

Analysis of Power MOSFET Performance in Parallel Operation

作　　者：钱敏[1] 徐鸣谦[1] 米智楠[1] 

机构地区：[1]同济大学机械工程学院,上海201804

出　　处：《半导体技术》2007年第11期951-956,共6页Semiconductor Technology

摘　　要：并联MOSFET非常适合于在低电压、大电流下工作。基于IRFS4227PBF功率MOSFET,分析和测试了在一定散热环境下MOSFET结温的收敛特性与漏极电流的关系,说明了MOSFET的实际电流容量受散热条件制约,并以此确定在额定电流下需要并联的个数。用PSPICE电路仿真论述了外围电路Q值和功率管参数等因素对并联驱动的动态均流特性的影响。在此基础上搭建实验平台,成功实现了8个MOSFET并联在高频状态下的稳定工作。Parallel MOSFET can be quite suitable for the low-voltage and high-current operating circumstance. The relationship between junction temperature and drain current of MOSFET was analyzed and tested using IRFS4227PBF. The result indicates that the practical rated drain current of MOSFET is restricted by the heat dissipation conditions, by which the number of parallel MOSFET can be confirmed. With PSPICE circuit simulation tools, the influences of Q-value and MOSFET parameters on the transient current share performance were discussed. Eight parallel MOSFETs were successfully driven to operate stablv at hizh freauencv.

关 键 词：MOSFET并联 安全工作区 导热 动态均流 PSPICE仿真 

分 类 号：TN386.1[电子电信—物理电子学]