抛光垫表面特性分析  

Analysis of Surface Characteristics of Polishing Pad

作　　者：苏建修[1] 傅宇[1] 杜家熙[1] 陈锡渠[1] 张学良[1] 郭东明[2] 

机构地区：[1]河南科技学院,河南新乡453003 [2]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024

出　　处：《半导体技术》2007年第11期957-960,共4页Semiconductor Technology

基　　金：国家自然科学基金重大项目资助(50390061)

摘　　要：研究抛光垫表面特性有利于了解和分析硅片化学机械抛光(CMP)材料的去除机理及优化抛光垫的微观结构。使用ZYGO 5022轮廓仪、SEM等仪器研究了IC1000/SubaIV平抛光垫表面粗糙度、表面组织结构、孔隙率、微孔深度及直径、抛光垫表面微凸峰分布形式及面积支承率,测量和计算的结果:抛光垫表面粗糙度为σp(RMS)=6.8μm,均方根粗糙度9.4μm,表面孔隙率为56%,平均孔径为36μm,平均孔深为20μm,平均孔距为43μm,微孔数量为550个/mm2,抛光垫表面微凸峰高度服从高斯分布。Studying the surface characteristics of polishing chemical mechanical polishing （CMP） mechanism and optimize The surface roughness, organizational structure, porosity, depth pad helps to understand and analyze the the microscopic structure of polishing pad and diameter of microporous, distribution of asperity and profile bearing rate of IC1000/SubaIV polishing pad were studied with the ZYGO 5022 profilometer and SEM. The results of measurement and calculation show that the surface roughness is 6.8μm, the root-mean-square （RMS） roughness is 9.4 μm, the surface porosity is 56%, the microporous average diameter is 36 μm, the microporous average depth is 20 μm, the microporous average spacing is 43 μm, the microporous average volume is 550/mm^2 and the asperity height obeys Gaussian distribution.

关 键 词：化学机械抛光 材料去除机理 高分子材料 抛光垫 表面特性 

分 类 号：TN305.2[电子电信—物理电子学] TB324[一般工业技术—材料科学与工程]