硅单晶中层错与氢的交互作用  

THE INTERACTION BETWEEN STACKING FAULT AND HYDROGEN IN SINGLE CRYSTAL SILICON

作　　者：蒋柏林[1] 职任涛[1] 褚武扬[1] 

机构地区：[1]北京科技大学,北京100083

出　　处：《金属学报》1997年第6期573-576,共4页Acta Metallurgica Sinica

摘　　要：利用阴极充氢法，向硅单晶表面注入氢离子，用化学浸蚀法观察晶体表面氢与层错间的相互作用层错，特别是Frank半位错在硅单晶表面的露头处是原子氢的择优聚集区，原子氢化合成分子氢后能诱发大的晶格畸变利用化学浸蚀法。Hydrogen on the surface of single crystal silicon has been introduced bycathodic charing. The interaction between stacking fault and hydrogen on the surface of thesample has been researched by means of chemical etching. Atomic hydrogen will segregate atoutcrops of the stacking fault and particularly Frank dislocation on the surface of single crystal silicon and compound into molecule hydrogen at the outcrops. The distortion zone induced by hydrogen pressure, which can be detected as etching pit after etching, is preferablylocated at the outcrops of Frank dislocation.

关 键 词：硅单晶 氢 层错 晶格畸变 热处理 

分 类 号：TN304.12[电子电信—物理电子学] O77[理学—晶体学]