生长周期对有机金属化学气相沉积法制备SiO_2-InP光子晶体的影响  

Effect of Growth Cycle on SiO_2-InP Fabricated by MOCVD

作　　者：谭春华[1] 黄旭光[1] 范广涵[2] 

机构地区：[1]华南师范大学信息光电子科技学院光子信息技术广东省高校重点实验室,广州510631 [2]华南师范大学信息光电子科技学院光电子材料与技术研究所,广州510631

出　　处：《光学学报》2007年第3期482-486,共5页Acta Optica Sinica

基　　金：广东省自然科学基金(04010398)资助课题。

摘　　要：有机金属化学气相沉积(MOCVD)方法在人工蛋白石空隙中填充了磷化铟(InP)晶体以改变这类材料的光学行为,在选择了InP的生长条件的基础上进行了周期生长试验。利用扫描电子显微镜(SEM)和紫外可见光谱(UV-Vis)对人工蛋白石晶体及其填充InP后的形貌和反射谱特性进行了分析。结果发现,采用周期生长方式有利于InP在模板空隙中的填充,且在反应时间相同的条件下,反应周期数越多,InP在空隙中的填充率越高,填充率增加反过来增大了二氧化硅球和空隙之间的折射率差,从而可控地对所制备光子晶体光子带隙进行调制。实验表明InP具有较好的生长质量,此项研究为制备三维InP光子晶体打下了基础。Atmospheric pressure metal-organic chemical-vapour deposition （MOCVD） has been used to infiltrate the voids within synthetic opals with InP to modify the natural photonic behaviour of these materials. Experiment is carried out for given growth conditions to study the effect of growth cycles. Morphologies and reflectivity spectrum properties of the artificial opal and InP-infiltrated artificial opal were researched by SEM and UV-Vis spectrometer. The results show that an increase in the InP infiltrationl of the pore volume is achieved if the total time of each reactant over the opal is constant while the total number of cycles is increased. The extent of InP infill within the voids increasing in turn increases the extent of refractive index contrast between the silica spheres and the void, and it is possible to modify the opal photonic band gap in a controllable manner. It is also found that the periodic growth is in favor of InP infiltration the InP grown shows a high quality by SEM. The study provides a scientific basis for manufacturing three-dimensional inP photonic crystals.

关 键 词：光学材料 光子晶体 人工蛋白石 有机金属化学气相沉积 光子带隙 

分 类 号：O437[机械工程—光学工程]