激光-等离子体辅助化学气相沉积工艺参数对氮化硅膜显微硬度的影响  

Influence of Processing Parameters of Laser-Plasma-Assisted Chemical Vapour Deposition on Microhardness of Si_3N_4-Films

作　　者：陆宗仪[1] 李文梅[1] 徐军[2] 夏元良[2] 郭宝海[2] 梅雨[2] 安世民[2] 

机构地区：[1]扬州大学工学院机械工程系,江苏扬州225009 [2]大连理工大学三束材料改性国家重点联合实验室,辽宁大连116024

出　　处：《机械工程材料》1997年第3期7-9,共3页Materials For Mechanical Engineering

基　　金：国家自然科学基金

摘　　要：采用一种新的方法──激光-等离子体辅助气相沉积法（LPCVD），在自行研制的LPCVD装置上进行了SiH4-NH3-N2体系沉积Si3N4膜的工艺试验；采用正交试验法选择工艺多数，根据显微硬度评价膜层性能，并找出最佳工艺参数：激光功率密度为328W／cm2，RF电源功率为50W，氮硅流量比为10。结果表明，激光功率密度对膜层显微硬度的影响最大，RF电源功率的影响次之，氮硅流量比的影响最弱。In this study, using a new technique, laser-plasma-assisted chemical vapour deposition (LPCVD), a series of processing experiments of prepring of Si3N4-films from SiH4-NH3-N2 system were carried out on a self-made LPCVD device. Processing parameters which have three factors and three levels were designed according to orthogonal test method. Properties of films were evaluated on the basis of microhardness of films and then the best combination of processing parameters was found out.The results indicate that the influence of laser power density on microhardness is the strongest, that of RF power comes second and that of N-Si-flow-ratio is weak. In our experimental conditions, the best combination of processing parameters is: laser power density is 328 W/cm2,RF power is 500W, N-Si-flow-ratio is 10

关 键 词：CVD 氮化硅陶瓷 表面工程 陶瓷涂层 显微硬度 

分 类 号：TG174.453[金属学及工艺—金属表面处理]