脉冲式退火法对AZO薄膜性能的研究(英文)  

Research on the Properties of AZO Annealed by PRTP

作　　者：张松青[1] 吴芳[2] 张丽伟[2,3] 高哲[2] 王子健[1] 卢景霄[2] 

机构地区：[1]河南机电高等专科学校,新乡453002 [2]郑州大学材料物理教育部重点实验室,郑州450052 [3]新乡学院,新乡453000

出　　处：《人工晶体学报》2007年第5期1182-1186,共5页Journal of Synthetic Crystals

基　　金：National Basic Research Program of China(973).(No.2006CB202601)

摘　　要：用磁控溅射法在玻璃衬底上制备了掺铝氧化锌(AZO)薄膜,然后用脉冲式快速光热处火(PRTP)法对样品进行了600 ～800℃的退火处理。采用X射线衍射仪(XRD)、分光光度计、四探针等测试手段对AZO薄膜的结晶性能、透光率和导电性能进行了表征。结果表明:(1)薄膜退火后透光率基本维持在退火前(82 ～92%)的水平,而电阻率则由10-4Ω.cm上升了1到6个数量级,已丧失了"导电膜"意义;(2)样品具有好的结构性能有利于提高样品的导电性能。对此现象进行了理论分析。ZnO：Al（AZO） thin films on glass were prepared by magnetron sputtering and subsequently annealed at 600℃ to 800℃ by pulsed rapid thermal processing （PRTP）. The XRD, Spectrophotometer and Four-point probe instruments were employed to measure the crystallinity, transmittance and conductivity of the AZO films. The results show that,（1）the resistivity of AZO films one to six order of magnitude from 10^-4Ω·cm while the transmittance keeps the same level of 82-92% as before annealing. Those cannot be used as electrode in solar cells after annealing; （2） It is clear that the good structural properties benefits the conductivity of the sample. The phenomenon analyzed in theory.

关 键 词：AZO薄膜 退火 透过率 电阻率 

分 类 号：O484[理学—固体物理]