深亚微米MOSFET的蒙特卡罗快速模拟  

Quick monte carlo simulation of deep-submicron MOSFET

作　　者：季峰[1] 徐静平[1] 陈卫兵[1] 李艳萍[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2007年第8期33-36,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60376019);湖北省自然科学基金资助项目(2003ABA087)

摘　　要：用蒙特卡罗-泊松方程自洽求解的方法,对深亚微米金属-氧化物-半导体场效应晶体管——MOSFET的电特性进行了模拟.在泊松方程的求解上,使用了矩阵法,与一般的迭代方法相比,求解速度得到了极大的提高.为减少自散射的次数,用阶梯自散射方案求电子的自由飞行时间.这两个措施的实施,减小了蒙特卡罗模拟时间,加快了模拟速度.模拟中主要考虑了电离杂质、声学形变势、表面粗糙散射和电子谷间散射四种散射机制.模拟的MOSFET输出特性曲线和电子速度在沟道中的分布与报道的相关结果符合得很好.An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor （MOSFET）. Matrix method is employed to solve Poisson equation, and the time to solve Poisson equation is reduced compared to conventional iteration method. To decrease the number of self scattering, the phase scheme of self scattering is applied to calculate free flight time. Through the above two methods, simulating time of Monte Carlo is reduced, thus the simulating velocity is accelerated. In this simulation, ionized impurities scattering, acoustic phonon scattering, surface roughness scattering and intervalley （or intravalley） scattering are considered. The simulated curve of output characteristics and distribution of electron velocity in the channel are consistent with the results reported.

关 键 词：金属-氧化物-半导体场效应晶体管 蒙特卡罗 散射率 自由飞行时间 

分 类 号：TN386.1[电子电信—物理电子学] TN401