掩埋金属自对准工艺对SiGe HBT性能的改善  

Buried-metal Self-aligned Process for SiGe HBT

作　　者：陈建新[1] 吴楠[1] 史辰[1] 杨维明[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《北京工业大学学报》2007年第10期1048-1051,共4页Journal of Beijing University of Technology

基　　金：国家自然科学基金(60476034)

摘　　要：为了改善传统的双台面工艺受光刻设备和工艺精度限制这一缺陷,引入了掩埋金属自对准工艺.新工艺使SiGe HBT的制作不受最小光刻条宽的限制,从而有效利用了现有的光刻精度.由此工艺得到的器件测量结果证明,在不提高现有光刻设备精度的基础上,掩埋金属自对准工艺对器件的性能有了改进.Aiming at improving accuracy of photoetching technology in conventional double-mesa process, this article introduced buried-metal layers and developed silicon based buried-metal self-aligned process in order to increase the mesa area utilization efficiency. Novel process has advantages of smaller junction area, larger met- al-semiconductor contact area and fewer pinhole fabrication defects, with no increase of fabrication difficulties or advancement of photolithography equipments.

关 键 词：掩埋金属 自对准 结面积利用率 金属-半导体接触 

分 类 号：TN323[电子电信—物理电子学]