锰铬体掺杂氧化铝陶瓷及其金属化  

Study on Properties and Metallization of Alumina Ceramic Doped with Manganese and Chromium

作　　者：雷杨俊[1] 曾敏[1] 游小凤[1] 赵鑫[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《真空电子技术》2007年第1期47-50,共4页Vacuum Electronics

摘　　要：基于95%氧化铝陶瓷开展锰铬体掺杂改性,掺杂后陶瓷样品的表面二次电子发射系数明显减小,表面电阻率显著降低,从而使其具有更高的表面绝缘能力(真空中)。针对锰铬体掺杂陶瓷样品开展了金属化试验,结果表明:通过对金属化膏剂配方和工艺的适当调整,体掺杂陶瓷的金属化效果良好,气密性和机械强度均满足使用要求。Ninety-five percent alumina ceramic was doped with manganese and chromium. After doping the ceramic sample possessed both a less secondary electron emission coefficient and a lower surface resistivity, which resulted in a higher surface insulating strength in vacuum. Metallization experiments of the doped samples were performed and fine metallization effects were obtained after suitable adjustments to the coating slurry and technology for metallization.

关 键 词：氧化铝陶瓷 体掺杂 表面性能 金属化 

分 类 号：TB756[一般工业技术—真空技术]