InGaAs/InP SAGCM-APD的器件模型及其数值模拟  

Device Model and Its Numerical Simulation of InGaAs/InP SAGCM-APD

作　　者：高新江[1] 张秀川[1] 陈扬[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2007年第5期617-622,共6页Semiconductor Optoelectronics

摘　　要：基于泊松方程和载流子连续性方程,导出了InGaAs/InP SAGCM-APD(吸收、渐变、电荷、倍增层分离结构雪崩光电二极管)特性的数学模型,利用数值计算工具对其进行了数值模拟,得到了APD内部电场分布、增益特性、暗电流特性、过剩噪声和增益带宽特性等的数值结果。模拟结果与实际器件特性测量结果相符合,表明运用该模型与数值模拟方法可对不同结构参数的InGaAs/InP SAGCM-APD进行结构设计、工艺改进和特性分析。The device model of InGaAs/InP SAGCM-APD（separate absorption, grading, charge,and multiplication avalanche photodiode）was constructed based on Poission＇ s equation and carrier continuity equation, and simulated by using numerical tool. The resulted characteristics such as electric field profile, multiplication, dark current, excess factor and multiplication-bandwidth of model APD were consistent with the measured value of practical APD. It shows that to analyze the characteristics, to optimize the structure designs and to improve processing of different structures of APD may benefit from making use of this model and simulation method.

关 键 词：INGAAS/INP SAGCM—APD 器件模型 数值模拟 器件特性 

分 类 号：TN312.7[电子电信—物理电子学]