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机构地区:[1]安徽工程科技学院机械工程系,安徽芜湖241000 [2]南开大学光电子薄膜器件与技术研究所,天津300071
出 处:《半导体光电》2007年第5期671-675,共5页Semiconductor Optoelectronics
基 金:国家高技术研究发展计划重点项目(2004AA513021);安徽省教育厅自然科学基金项目(KJ2007B062)
摘 要:在A(ZnSO4、SC(NH2)2、NH4OH)和含有联氨的B(ZnSO4、SC(NH2)2、NH4OH、(NH2)2)两种水溶液中采用化学水浴法沉积ZnS薄膜,研究了联氨对薄膜沉积过程和薄膜性质的影响。结果表明,加入少量联氨以后,薄膜沉积速度明显增加。两种溶液沉积的ZnS都为立方相结构,且含有联氨的B溶液沉积的ZnS薄膜表面附着颗粒较少。在含有联氨的B溶液中沉积的ZnS薄膜结晶度和短波区的透过率均高于A溶液沉积的ZnS薄膜。将两种溶液沉积的ZnS薄膜作为电池缓冲层制备铜铟镓硒(CIGS)薄膜太阳电池,加入联氨沉积的ZnS制备的CIGS电池转换效率达到7.77%,比不加联氨沉积的ZnS制备的CIGS电池转换效率提高了1.3%。ZnS films were grown onto glass substrates by chemical bath deposition (CBD) technique from A bath containing thiourea, ZnSO4, ammonia and B bath containing thiourea, ZnSO4, ammonia and (NH2)2in aqueous solution. Results on growth rate, micrograph and optical properties of the layers as a function of (NH2)2 concentration are reported. X-ray diffraction patterns indicates that the CBD-ZnS samples are microcrystalline with a cubic structure. As adding some (NH2)2, the adhered particles decrease, the crystal and transmission of ZnS films increase. The performance of CIGS solar cells with ZnS buffer layers deposited from A and B solution was compared. The results suggest that the efficiency and short circuit current of the CIGS solar cell which buffer layer ZnS deposited from B solution are higher than the cell which buffer layer ZnS deposited from A solution.
关 键 词:联氨 ZNS薄膜 化学水浴沉积(CBD) CIGS太阳电池
分 类 号:TK511.4[动力工程及工程热物理—热能工程]
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