双曲正割平方势与量子阱的电子跃迁  

Hyperbolic Secant-squared Potential and Electron Transition in Superlattice Quantum Well

作　　者：胡西多[1] 罗诗裕[1] 邵明珠[1] 

机构地区：[1]东莞理工学院电子工程系,广东东莞523106

出　　处：《半导体光电》2007年第5期690-692,共3页Semiconductor Optoelectronics

摘　　要：引入了双曲正割平方势来描述超晶格量子阱中的电子运动,利用这个相互作用势把电子的Schr dinger方程化为了超几何方程,并以Ga1-xAlxAs/GaAs/Ga1-xAlxAs量子阱为例计算了电子的带间跃迁。结果表明,阱内的能级数目和跃迁能量与系统参数有关。于是,可望通过对势阱参数的控制来得到不同光电特性的量子阱材料。The interaction potential with secsh^2x form is lead to describe an electron motion in superlattice quantum well, and in the frame of quantum mechanics, Schrǒdinger equation is reduced to the hypergeometric equation by this potential. As an example, the transition between the band and the band for material Ga1-xAlxAs/GaAs/Ga1-xAlxAs are calculated. It shows that level number and transition energy in a well are related to the system parameters. Thus, the material with the variable photo-electrical properties might be obtained by using method of the controlled parameters of the well.

关 键 词：超晶格 量子阱 超几何方程 单粒子能级 

分 类 号：O471.5[理学—半导体物理]