New Power Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with a Folded Accumulation Layer  

作　　者：段宝兴 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054

出　　处：《Chinese Physics Letters》2007年第5期1342-1345,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60576052, and Material Research Foundation of China under Grant No 9140C0903010604.

摘　　要：A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage and specific on-resistance. Three kinds of technologies, which are the additional electric field modulation effect, majority carrier accumulation and increasing the effective conduction area, are applied simultaneously by a semi- insulating polycrystalline silicon layer deposited over the top of thin oxide covering the drift region. It is indicated that by the simulator, the ideal silicon limits of the breakdown voltage and specific on-resistance have been broken due to the complete three-dimensional reduced surface field effect and the doubled majority carrier accumulation layer.A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage and specific on-resistance. Three kinds of technologies, which are the additional electric field modulation effect, majority carrier accumulation and increasing the effective conduction area, are applied simultaneously by a semi- insulating polycrystalline silicon layer deposited over the top of thin oxide covering the drift region. It is indicated that by the simulator, the ideal silicon limits of the breakdown voltage and specific on-resistance have been broken due to the complete three-dimensional reduced surface field effect and the doubled majority carrier accumulation layer.

关 键 词：ON-RESISTANCE 

分 类 号：TN31[电子电信—物理电子学]