机构地区:[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Beijing Solar Energy Research Institute, Beijing 100083
出 处:《Chinese Physics Letters》2007年第5期1350-1353,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 60476002, 60390071, 60576036 and 60276014, the National Basic Research Programme of China under Grant Nos 2006CB202604 and 2006CB604900, and the Hi-Tech Research and Development Programme of China under Grant No 2006AA03Z0408.
摘 要:We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3′, 7′-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity a bout 1.2 e V greater than that of MDMO-PP V. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electrolumi- nescence action due to the fact that the back transfer effect can be observed in the ZnO:MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO:MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3′, 7′-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity a bout 1.2 e V greater than that of MDMO-PP V. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electrolumi- nescence action due to the fact that the back transfer effect can be observed in the ZnO:MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO:MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.
关 键 词:SOLAR-CELLS ZINC-OXIDE NANOPARTICLES PRECURSOR NANORODS
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