ZINC-OXIDE

作品数:18被引量:13H指数:2
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相关领域:电子电信理学更多>>
相关期刊:《Chinese Physics Letters》《Journal of Materials Science & Technology》《Asian pacific Journal of Reproduction》《Chinese Physics B》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划广东省自然科学基金更多>>
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High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al_(2)O_(3)/HfO_(2) Dielectrics
《Chinese Physics Letters》2022年第11期68-71,共4页Yue Li Li Zhu Chunsheng Chen Ying Zhu Changjin Wan Qing Wan 
supported by the National Key Research and Development Program of China(Grant Nos.2019YFB2205400 and 2021YFA1200051);the National Natural Science Foundation of China(Grant No.62074075)。
High-performance amorphous indium-gallium-zinc-oxide thin-film transistors(a-IGZO TFTs)gated by AlO/HfOstacked dielectric films are investigated.The optimized TFTs with AlO(2.0 nm)/HfO(13 nm)stacked gate dielectrics d...
关键词:ZINC inverter performance 
Indium-Gallium-Zinc-Oxide-Based Photoelectric Neuromorphic Transistors for Spiking Morse Coding
《Chinese Physics Letters》2022年第6期1-4,共4页Xinhuang Lin Haotian Long Shuo Ke Yuyuan Wang Ying Zhu Chunsheng Chen Changjin Wan Qing Wan 
supported by the National Key Research and Development Program of China (Grant No. 2019YFB2205400);the National Natural Science Foundation of China (Grant No. 62074075)
The human brain that relies on neural networks communicated by spikes is featured with ultralow energy consumption, which is more robust and adaptive than any digital system. Inspired by the spiking framework of the b...
关键词:MORSE Zinc filtering 
Zinc-oxide/PDMS-clad tapered fiber saturable absorber for passively mode-locked erbium-doped fiber laser
《Chinese Physics B》2021年第5期384-389,共6页F D Muhammad S A S Husin E K Ng K Y Lau C A C Abdullah M A Mahdi 
the Ministry of Higher Education of Malaysia(MOHE)(Grant No.FRGS/1/2019/STG02/UPM/02/4).
We propose and demonstrate a passively mode-locked erbium-doped fiber laser(EDFL)based on zinc-oxide/polydimethylsiloxane(ZnO/PDMS)saturable absorber(SA)that evanescently interacts with the light on a tapered fiber.Th...
关键词:ZINC-OXIDE saturable absorber tapered fiber MODE-LOCKED fiber laser 
Indium-gallium-zinc-oxide thin-film transistors:Materials,devices,and applications被引量:5
《Journal of Semiconductors》2021年第3期18-36,共19页Ying Zhu Yongli He Shanshan Jiang Li Zhu Chunsheng Chen Qing Wan 
The authors are grateful for the financial support from the National Natural Science Foundation of China(Grant No.62074075,61834001);the National Key R&D Program of China(Grant No.2019YFB2205400).
Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri...
关键词:indium-gallium-zinc-oxide thin-film transistors flat panel displays SENSORS flexible electronics neuromorphic systems 
Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate被引量:1
《Research》2021年第1期295-303,共9页Kuankuan Lu Rihui Yao Wei Xu Honglong Ning Xu Zhang Guanguang Zhang Yilin Li Jinyao Zhong Yuexin Yang Junbiao Peng 
supported by the National Natural Science Foundation of China(Grant Nos.51771074,62074059,and 22090024);Guangdong Major Project of Basic and Applied Basic Research(No.2019B030302007);Fundamental Research Funds for the Central Universities(Nos.2020ZYGXZR060 and 2019MS012);Guangdong Natural Science Foundation(No.2018A0303130211);South China University of Technology 100 Step Ladder Climbing Plan Research Project(Nos.j2tw202004035,j2tw202004034,and j2tw202004095);National College Students Innovation and Entrepreneurship Training Program(Nos.202010561001,202010561004,and 202010561009);2021 Guangdong University Student Science and Technology Innovation Special Fund(“Climbing Plan”Special Fund)(No.pdjh2021b0036);Ji Hua Laboratory Scientific Research Project(X190221TF191).
Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexi...
关键词:interface ELECTRODE copper 
Resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment
《Journal of Materials Science & Technology》2020年第14期1-6,共6页Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He 
supported by the National Key Research and Development Program under Grant 2017YFB0405600;National Natural Science Foundation of China(No.61774057);The Open Fund of State Key Laboratory on Integrated Optoelectronics(IOSKL2018KF08);The Open Fund of Hubei Key Laboratory of Applied Mathematics(HBAM 201801)。
With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-p...
关键词:Memory device Resistive switching Plasma treatment Indium-gallium-zinc-oxide MEMRISTOR 
Zinc-oxide nanoparticle-based saturable absorber deposited by simple evaporation technique for Q-switched fiber laser
《Chinese Physics B》2019年第8期167-171,共5页Syarifah Aloyah Syed Husin Farah Diana Muhammad Che Azurahanim Che Abdullah Siti Huzaimah Ribut Mohd Zamani Zulkifli Mohd Adzir Mahdi 
Project supported by the Science Fund from the Ministry of Higher Education of Malaysia(MOHE)(Grant No.FRGS/1/2016/STG02/UPM/02/5)
A Q-switched erbium-doped fiber laser(EDFL)incorporating zinc-oxide(ZnO)nanoparticles-based saturable absorber(SA)is proposed and demonstrated.To form the SA,the ZnO nanoparticles,which are originally in the powder fo...
关键词:zinc oxide saturable ABSORBER Q-SWITCHED fiber laser 
Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K
《Chinese Physics Letters》2018年第9期95-98,共4页Yuan Liu Li Wang Shu-Ting Cai Ya-Yi Chen Rongsheng Chen Xiao-Ming Xiongl Kui-Wei Geng 
Supported by the National Natural Science Foundation of China under Grant No 61574048;the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172;the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006;the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters (threshold voltage, field effect mobility, su...
关键词:In exp Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K 
Developmental competence of bovine oocytes with increasing concentrations of nano-copper and nano-zinc particles during in vitro maturation被引量:1
《Asian pacific Journal of Reproduction》2018年第4期161-166,共6页Bakar R Abdel-Halim Walaa A Moselhy Nermeen Atef Helmy 
Objective: To evaluate copper and zinc concentrations in plasma and follicular fluid from cattle ovaries, and estimate the impact of rational concentrations of copper and zinc oxide nanoparticles (CuO-NPs & ZnO-NPs) s...
关键词:Nanocopper-oxide PARTICLE Nanozinc-oxide PARTICLE Toxicity IVM In vitro embryo production Cattle 
Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination
《Chinese Physics Letters》2016年第3期131-134,共4页汤兰凤 陆海 任芳芳 周东 张荣 郑有炓 黄晓明 
Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155;the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Fundamental Research Funds for the Central Universities under Grant No 021014380033
The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on vo...
关键词:IGZO of TFT 
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