supported by the National Key Research and Development Program of China(Grant Nos.2019YFB2205400 and 2021YFA1200051);the National Natural Science Foundation of China(Grant No.62074075)。
High-performance amorphous indium-gallium-zinc-oxide thin-film transistors(a-IGZO TFTs)gated by AlO/HfOstacked dielectric films are investigated.The optimized TFTs with AlO(2.0 nm)/HfO(13 nm)stacked gate dielectrics d...
supported by the National Key Research and Development Program of China (Grant No. 2019YFB2205400);the National Natural Science Foundation of China (Grant No. 62074075)
The human brain that relies on neural networks communicated by spikes is featured with ultralow energy consumption, which is more robust and adaptive than any digital system. Inspired by the spiking framework of the b...
the Ministry of Higher Education of Malaysia(MOHE)(Grant No.FRGS/1/2019/STG02/UPM/02/4).
We propose and demonstrate a passively mode-locked erbium-doped fiber laser(EDFL)based on zinc-oxide/polydimethylsiloxane(ZnO/PDMS)saturable absorber(SA)that evanescently interacts with the light on a tapered fiber.Th...
The authors are grateful for the financial support from the National Natural Science Foundation of China(Grant No.62074075,61834001);the National Key R&D Program of China(Grant No.2019YFB2205400).
Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri...
supported by the National Natural Science Foundation of China(Grant Nos.51771074,62074059,and 22090024);Guangdong Major Project of Basic and Applied Basic Research(No.2019B030302007);Fundamental Research Funds for the Central Universities(Nos.2020ZYGXZR060 and 2019MS012);Guangdong Natural Science Foundation(No.2018A0303130211);South China University of Technology 100 Step Ladder Climbing Plan Research Project(Nos.j2tw202004035,j2tw202004034,and j2tw202004095);National College Students Innovation and Entrepreneurship Training Program(Nos.202010561001,202010561004,and 202010561009);2021 Guangdong University Student Science and Technology Innovation Special Fund(“Climbing Plan”Special Fund)(No.pdjh2021b0036);Ji Hua Laboratory Scientific Research Project(X190221TF191).
Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexi...
supported by the National Key Research and Development Program under Grant 2017YFB0405600;National Natural Science Foundation of China(No.61774057);The Open Fund of State Key Laboratory on Integrated Optoelectronics(IOSKL2018KF08);The Open Fund of Hubei Key Laboratory of Applied Mathematics(HBAM 201801)。
With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-p...
Project supported by the Science Fund from the Ministry of Higher Education of Malaysia(MOHE)(Grant No.FRGS/1/2016/STG02/UPM/02/5)
A Q-switched erbium-doped fiber laser(EDFL)incorporating zinc-oxide(ZnO)nanoparticles-based saturable absorber(SA)is proposed and demonstrated.To form the SA,the ZnO nanoparticles,which are originally in the powder fo...
Supported by the National Natural Science Foundation of China under Grant No 61574048;the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172;the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006;the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters (threshold voltage, field effect mobility, su...
Objective: To evaluate copper and zinc concentrations in plasma and follicular fluid from cattle ovaries, and estimate the impact of rational concentrations of copper and zinc oxide nanoparticles (CuO-NPs & ZnO-NPs) s...
Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155;the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Fundamental Research Funds for the Central Universities under Grant No 021014380033
The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on vo...