Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination  

作　　者：汤兰凤 陆海 任芳芳 周东 张荣 郑有炓 黄晓明 

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University [2]Collaborative Innovation Center of Advanced Microstructures,Nanjing University [3]Peter Griinberg Research Center,Nanjing University of Posts and Telecommunications

出　　处：《Chinese Physics Letters》2016年第3期131-134,共4页中国物理快报（英文版）

基　　金：Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155;the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Fundamental Research Funds for the Central Universities under Grant No 021014380033

摘　　要：The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide （a-IGZO） thin-film transistors （TFTs） under ultraviolet （UV） illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial stste after long-time storage.The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide （a-IGZO） thin-film transistors （TFTs） under ultraviolet （UV） illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial stste after long-time storage.

关 键 词：IGZO of TFT 

分 类 号：TN321.5[电子电信—物理电子学] TQ324.9[化学工程—合成树脂塑料工业]