云南高校图书馆联盟文献共享服务平台- IGZO

IGZO: 作品数：105被引量：110H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张建华李喜峰陈龙龙喻志农高晓红更多>>; 相关机构：山东大学深圳市华星光电技术有限公司东南大学深圳市华星光电半导体显示技术有限公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金山东大学自主创新基金中国博士后科学基金国家重点基础研究发展计划更多>>

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics: 《Science China(Information Sciences)》2025年第2期318-333,共16页Shengzhe YAN Zhaori CONG Zi WANG Zhuoyu DAI Zeyu GUO Zhihang QIAN Xufan LI Xu ZHENG Chuanke CHEN Nianduan LU Chunmeng DOU Guanhua YANG Xiaoxin XU Di GENG Jinshan YUE Lingfei WANG Ling LI Ming LIU; supported in part by National Key R&D Program of China(Grant No.2022YFB3606902);National Natural Science Foundation of China(Grant Nos.62204256,92264204,62274178,62488201);Beijing Nova Program(Grant No.Z211100002121125);China Postdoctoral Science Foundation(Grant Nos.BX20220330,2021M703444);Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB44000000)。; Compute-in-memory(CIM)based on various devices such as static random access memory(SRAM)and resistive random access memory(RRAM)and other emerging devices such as indium-gallium-zinc-oxide(IGZO)transistor,magnetoresis...; 关键词：compute-in-memory(CIM) monolithic 3D RRAM IGZO 3D-stack simulation

Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing: 《Science China(Information Sciences)》2024年第12期277-286,共10页Li ZHU Sixian LI Junchen LIN Yuanfeng ZHAO Xiang WAN Huabin SUN Shancheng YAN Yong XU Zhihao YU Chee Leong TAN Gang HE; financially supported by National Natural Science Foundation of China (Grant Nos.52105369,61974070);Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No.23KJB510014);Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant No.NY222061);Scientific Research Project of Colleges and Universities in Anhui Province (Grant No.2022AH050113);University Synergy Innovation Program of Anhui Province (Grant No.GXXT-2022-012)。; Inspired by biological visual systems, optoelectronic synapses with image perception, memory retention, and preprocessing capabilities offer a promising pathway for developing high-performance artificial perceptual vi...; 关键词：IGZO optoelectronic synaptic devices persistent photoconductivity ultra-low power neuromorphic computing

IGZO薄膜晶体管专利技术现状: 《中国科技信息》2024年第22期11-13,共3页赖淑妹; IGZO薄膜晶体管凭借较高的迁移率,较好的均一性、透明度和较低的制作温度、工艺难度,在液晶显示和有机发光二极管领域受到广泛关注。本文从专利申请的角度对IGZO薄膜晶体管的发展进行分析,介绍了IGZO薄膜晶体管技术的国内外专利申请情...; 关键词：有机发光二极管液晶显示迁移率专利申请技术发展动向晶体管专利技术工艺难度

High-performance IGZO/In_(2)O_(3) NW/IGZO phototransistor with heterojunctions architecture for image processing and neuromorphic computing: 《Journal of Materials Science & Technology》2024年第29期190-199,共10页Can Fu Zhi-Yuan Li Yu-Jiao Li Min-Min Zhu Lin-Bao Luo Shan-Shan Jiang Yan Wang Wen-Hao Wang Gang He; supported by the National Natural Science Foun-dation of China(Nos.11774001,52202156,52103297);the Anhui Project(No.Z010118169);the Scientific research project of colleges and universities in Anhui Province(No.2022AH050113);the Uni-versity Synergy Innovation Program of Anhui Province(No.GXXT-2022-012);the Postdoctoral daily public start-up funds of An-hui University(No.S202418001/069).; The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning.Here,based on metal-oxide heterojunction architecture,artificial synaptic pho...; 关键词：Metal oxide Artificial synaptic devices PHOTOTRANSISTOR Associative-memory-learning Neuromorphic applications

具有稳定阈值开关特性的全印刷IGZO忆阻器阵列用于人工伤害感受器被引量：1: 《Science China Materials》2024年第8期2661-2670,共10页彭文鸿刘常飞许晨辉覃琮尧秦宁浦陈惠鹏郭太良胡文平; supported by the National Key Research and Development Program of China(2022YFB3603802);the National Natural Science Foundation of China(62374033);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ129)。; 人工感知系统的大规模制备与图案化对实现仿生系统至关重要.传统工艺的图案化受限于掩膜版,难以大规模制备.喷墨打印技术的无掩膜图案化制备能力十分适配目前大规模制备的需求.然而,在器件的制造上,打印技术往往局限于制造简单的器件或...; 关键词：喷墨打印技术有源层忆阻器人工神经元图案化金属氧化物循环扫描感知系统

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel: 《Journal of Semiconductors》2024年第7期40-44,共5页Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao; funded in part by the National Key R&D Program of China(Grant No.2022YFB3606900);in part by the National Natural Science of China(Grant No.62004217)。; In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for th...; 关键词：In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode: 《Chinese Physics Letters》2024年第6期156-161,I0001-I0003,共9页宋双梁会力霍文星张广张永晖王绩伟梅增霞; supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139);the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。; In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...; 关键词：IGZO ATTRACTIVE ULTRAVIOLET

基于原子层沉积IGZO场效应晶体管的接触电阻优化: 《中国集成电路》2024年第6期75-81,共7页王昊哲李调阳; 国家自然科学基金(No.62204042);福建省自然科学基金(No.2021J05118)。; 氧化铟镓锌(IGZO)具有宽带隙、高迁移率、和CMOS后道工艺兼容等优势,可用于下一代高密度三维堆叠存储器。随着IGZO场效应晶体管的尺寸不断微缩,源漏接触电阻在开态时会主导器件总电阻。因此,IGZO场效应晶体管的接触电阻优化成为需要研...; 关键词：氧化铟镓锌场效应晶体管接触电阻原子层沉积

IGZO薄膜晶体管生物传感器无标记检测强直性脊柱炎: 《西安交通大学学报》2024年第2期157-163,共7页吕腾博刘嘉乐刘丽李昕韩传余王小力; 国家自然科学基金资助项目(62174130);装备预研基金资助项目(2022-JCJQ-JJ-1099);陕西省重点研发计划资助项目(2023-YBSF-407)。; 为了快速检测强直性脊柱炎血清学分子标志物人体白细胞抗原(HLA-B27),开发了一种基于人体白细胞抗原B27(HLA-B27)功能化的氧化铟镓锌(IGZO)薄膜晶体管生物传感器。利用射频磁控溅射技术和微纳加工工艺制备了IGZO薄膜晶体管(IGZO TFT),采...; 关键词：IGZO 薄膜晶体管生物传感器强直性脊柱炎人体白细胞抗原B27

基于IGZO薄膜晶体管的高可靠性时分驱动GOA电路: 《电子学报》2023年第12期3463-3472,共10页周刘飞邵贤杰王海宏王保平; 本文提出一种新颖的基于IGZO(Indium Gallium Zinc Oxide)薄膜晶体管的双向扫描集成栅极驱动(Gate Driver on Array,GOA)电路,特别适用于in-cell触控显示.本文提出的GOA电路采用时分驱动方式(Time-Division Driving Method,TDDM)实现高...; 关键词：IGZO薄膜晶体管集成栅极驱动时分驱动法可靠性阈值电压漂移内置触控

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