Low-Voltage IGZO Field-Effect Ultraviolet Photodiode  

作　　者：宋双 梁会力 霍文星 张广 张永晖 王绩伟 梅增霞 Shuang Song;Huili Liang;Wenxing Huo;Guang Zhang;Yonghui Zhang;Jiwei Wang;Zengxia Mei(Songshan Lake Materials Laboratory,Dongguan 523808,China;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;College of Physics,Liaoning University,Shenyang 110036,China;Department of Instruments Science and Technology,School of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China;National Key Laboratory of Scattering and Radiation,Beijing 100039,China;School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China)

机构地区：[1]Songshan Lake Materials Laboratory,Dongguan 523808,China [2]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]College of Physics,Liaoning University,Shenyang 110036,China [4]Department of Instruments Science and Technology,School of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China [5]National Key Laboratory of Scattering and Radiation,Beijing 100039,China [6]School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China

出　　处：《Chinese Physics Letters》2024年第6期156-161,I0001-I0003,共9页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139);the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。

摘　　要：In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

关 键 词：IGZO ATTRACTIVE ULTRAVIOLET 

分 类 号：TN31[电子电信—物理电子学]