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RRAM: 作品数：136被引量：172H指数：6; 导出分析报告; 相关领域：自动化与计算机技术电子电信更多>>; 相关作者：张锋刘明康晋锋刘力锋许晓欣更多>>; 相关机构：中国科学院微电子研究所安徽大学复旦大学北京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家科技重大专项更多>>

Attar:RRAM-based in-memory attention accelerator with software-hardware co-optimization: 《Science China(Information Sciences)》2025年第3期367-383,共17页Bing LI Ying QI Ying WANG Yinhe HAN; supported by National Natural Science Foundation of China(Grant Nos.62204164,62222411,62025404);National Key Research and Development Program of China(Grant No.2023YFB4404400);the“Hundred Talents Program”of the Chinese Academy of Sciences(Grant No.E4YB012)。; The attention mechanism has become a pivotal component in artificial intelligence,significantly enhancing the performance of deep learning applications.However,its quadratic computational complexity and intricate comp...; 关键词：RRAM computing-in-memory ATTENTION pruning quantization

A review on monolithic 3D integration:From bulk semiconductors to low-dimensional materials: 《Nano Research》2025年第3期581-604,共24页Ziying Hu Hongtao Li Mingdi Zhang Zeming Jin Jixiang Li Wenku Fu Yunyun Dai Yuan Huang Xia Liu Yeliang Wang; fundings from the National Natural Science Foundation of China(Nos.62274013 and 92163206);the National Key Research and Development Program of China(No.2023YFB3405600);Science Fund for Creative Research Groups of the National Natural Science Foundation of China(No.12321004)。; Monolithic three-dimensional(M3D)integration represents a transformative approach in semiconductor technology,enabling the vertical integration of diverse functionalities within a single chip.This review explores the ...; 关键词：monolithic three-dimensional(M3D)integration two-dimensional(2D)material logic circuit static random access memory(SRAM) resistive random access memory(RRAM) sensor OPTOELECTRONICS artificial intelligence

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics: 《Science China(Information Sciences)》2025年第2期318-333,共16页Shengzhe YAN Zhaori CONG Zi WANG Zhuoyu DAI Zeyu GUO Zhihang QIAN Xufan LI Xu ZHENG Chuanke CHEN Nianduan LU Chunmeng DOU Guanhua YANG Xiaoxin XU Di GENG Jinshan YUE Lingfei WANG Ling LI Ming LIU; supported in part by National Key R&D Program of China(Grant No.2022YFB3606902);National Natural Science Foundation of China(Grant Nos.62204256,92264204,62274178,62488201);Beijing Nova Program(Grant No.Z211100002121125);China Postdoctoral Science Foundation(Grant Nos.BX20220330,2021M703444);Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB44000000)。; Compute-in-memory(CIM)based on various devices such as static random access memory(SRAM)and resistive random access memory(RRAM)and other emerging devices such as indium-gallium-zinc-oxide(IGZO)transistor,magnetoresis...; 关键词：compute-in-memory(CIM) monolithic 3D RRAM IGZO 3D-stack simulation

Self-aligned TiO_(x)-based 3D vertical memristor for a high-density synaptic array: 《Frontiers of physics》2024年第6期125-137,共13页Subaek Lee Juri Kim Sungjun Kim; supported in part by the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.2021R1C1C1004422);Korea Institute of Energy Technology Evaluation and Planning(KETEP)grant funded by the Korea government(MOTIE)under Grant No.20224000000020.; The emerging nonvolatile memory,three-dimensional vertical resistive random-access memory(VRRAM),inspired by the vertical NAND struc-ture,has been proposed to replace NAND flash memory which has reached its integratio...; 关键词：3D integration resistive switching vertical RRAM synaptic plasticity self-aligned insulator

基于分区再训练的RRAM阵列多缺陷容忍算法: 《计算机应用研究》2024年第10期3068-3072,共5页王梦可杨朝晖查晓婧夏银水; 国家自然科学基金资助项目(62131010,U22A2013);国家自然科学基金青年项目(62304115);浙江省自然科学基金创新群体资助项目(LDT23F04021F04);浙江省科研计划一般项目(Y202248965)。; 针对RRAM单元制造工艺不完善造成神经网络矩阵向量乘法计算错误问题,根据RRAM阵列多缺陷特性进行建模,提出了多缺陷容忍算法。首先根据RRAM阵列常见的转变缺陷和粘连缺陷对神经网络计算准确度的影响,对两种缺陷统一建模;然后对神经网络...; 关键词：RRAM阵列缺陷容忍神经网络知识蒸馏

基于GA-DNN模型的RRAM数据自动化分析系统: 《电子器件》2024年第5期1201-1209,共9页王晓荃左石凯陈铖颖; 福建省自然科学基金面上项目(2020J01295);厦门市青年创新基金项目(3502Z20206074);厦门市重大科技项目(3502Z20221022)。; 为了整合RRAM器件的测试数据,提升RRAM器件性能探知效率,构建了一套适用于RRAM测试数据分析和可视化的Web系统。结合Set和Reset操作的测试数据,提出一种GA-DNN模型算法,用于预测RRAM器件操作电压,从而为相同测试条件的实验提供可信的预...; 关键词：阻变存储器 GA-DNN模型自动化分析系统数据分析及可视化

Stable switching behavior of low-temperature ZrO_(2)RRAM devices realized by combustion synthesis-assisted photopatterning: 《Journal of Materials Science & Technology》2024年第22期68-76,共9页Bongho Jang Junil Kim Jieun Lee Jaewon Jang Hyuk-Jun Kwon; supported by the National Research Founda-tion of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(Nos.RS-2023-00251283,RS-2023-00257003,and 2022M3D1A2083618);supported by the DGIST R&D Program of the MSIT(No.23-CoE-BT-03).; We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures...; 关键词：ZrO_(2) Combustion SOL-GEL RRAM PATTERNING

基于统计数据的RRAM器件特性参数分析: 《中国科学：信息科学》2024年第8期2021-2034,共14页柯庆代月花; 国家自然科学基金(批准号:62274002,61874001)资助项目。; 本文统计了58款不同结构和不同材料的RRAM器件结构和电学特性参数,根据参数之间的联系建立了器件特性参数的计算模型,用统计学的百分位法计算了器件数据的差异性,获得了RRAM器件参数的定量指标.根据计算结果,我们发现RRAM器件的写时间...; 关键词：阻变存储器件参数计算模型百分位方法统计指标

基于28 nm RRAM的可重构真随机数发生器: 《浙江大学学报（工学版）》2024年第7期1516-1523,共8页宋长坤郑彩萍陈铖颖; 福建省自然科学基金引导性项目(2023H0052);厦门市重大科技项目(3502Z20221022)。; 基于阻变存储器(RRAM)电流饥饿型环形振荡器的真随机数发生器(TRNG)方案,提出交替读写的操作模式,优化熵源重构机制.针对现有RRAM在多操作周期下跨导线性化问题,提出熵可配置电阻窗口钳位电路.通过减小电阻窗口获得RRAM非线性的最大化,...; 关键词：阻变存储器(RRAM) 真随机数发生器(TRNG) 熵源电流饥饿型环形振荡器跨导线性

基于ATE与结构分析的RRAM芯片测试技术研究被引量：3: 《电子与封装》2024年第7期36-42,共7页奚留华徐昊张凯虹武乾文王一伟; 为了测试阻变存储器(RRAM)芯片,基于RRAM芯片的基本结构、接口定义、功能,分析并总结了其性能、工作模式和芯片时序。通过公式计算与实测技术相结合的方法,测定了RRAM芯片的容量。结果表明,基于结构分析的公式计算可依据RRAM存储单元的...; 关键词：RRAM芯片 ATE 测试算法结构分析

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