基于ATE与结构分析的RRAM芯片测试技术研究  

Research on RRAM Chip Testing Technology Based on ATE and Structural Analysis

作　　者：奚留华 徐昊 张凯虹 武乾文 王一伟 XI Liuhua;XU Hao;ZHANG Kaihong;WU Qianwen;WANG Yiwei(Wuxi CMC Electronics Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微腾芯电子有限公司,江苏无锡214035

出　　处：《电子与封装》2024年第7期36-42,共7页Electronics & Packaging

摘　　要：为了测试阻变存储器(RRAM)芯片,基于RRAM芯片的基本结构、接口定义、功能,分析并总结了其性能、工作模式和芯片时序。通过公式计算与实测技术相结合的方法,测定了RRAM芯片的容量。结果表明,基于结构分析的公式计算可依据RRAM存储单元的间距推导出RRAM芯片的容量。利用自动测试系统对RRAM芯片进行功能验证。同时,设计了1款RRAM芯片耐久性测试装置,全面评估了RRAM芯片的擦写性能。In order to test the resistive-variable memory(RRAM)chip,the performance,working mode and chip timing are analyzed and summarized based on the basic structure,interface definition and function of the RRAM chip.The capacity of the RRAM chip is measured by combining formula calculation with actual measurement techniques.The results show that the formula calculation based on structural analysis can calculate the capacity of RRAM chips based on the spacing of the RRAM memory cells.An automatic testing system is used to verify the function of the RRAM chip,at the same time,a durability testing device of RRAM chip is designed and the erasing performance of RRAM chip is evaluated comprehensively.

关 键 词：RRAM芯片 ATE 测试算法 结构分析 

分 类 号：TN407[电子电信—微电子学与固体电子学]