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作 者:Bongho Jang Junil Kim Jieun Lee Jaewon Jang Hyuk-Jun Kwon
机构地区:[1]Department of Electrical Engineering and Computer Science,DGIST,Daegu 42988,Korea [2]School of Electronic and Electrical Engineering,Kyungpook National University,Daegu 41566,Korea [3]School of Electronics Engineering,Kyungpook National University,Daegu 41566,Korea [4]Convergence Research Advanced Centre for Olfaction,DGIST,Daegu 42988,Korea
出 处:《Journal of Materials Science & Technology》2024年第22期68-76,共9页材料科学技术(英文版)
基 金:supported by the National Research Founda-tion of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(Nos.RS-2023-00251283,RS-2023-00257003,and 2022M3D1A2083618);supported by the DGIST R&D Program of the MSIT(No.23-CoE-BT-03).
摘 要:We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.
关 键 词:ZrO_(2) Combustion SOL-GEL RRAM PATTERNING
分 类 号:TB383.2[一般工业技术—材料科学与工程] TP333[自动化与计算机技术—计算机系统结构]
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