掩模曝光剂量的精细控制工艺设计  

Mask Fine OPC Process Design Using Circuit Feature Decomposition

作　　者：胡广荣[1] 李文石[1] 

机构地区：[1]苏州大学电子信息学院微电子学系

出　　处：《中国集成电路》2007年第11期88-91,共4页China lntegrated Circuit

摘　　要：本文从光学邻近效应的机理出发,基于区域划分掩模特征线条,实施曝光剂量控制,从而达到光学邻近效应的精细校正。通过模拟测试图形得到改进后的掩模图形畸变率,与传统曝光剂量校正法相比,减少了约4%。Based on the physical mechanism of optical proximity effect, a new method for fine exposure dose control to optimize optical proximity effect correction is presented. Mask circuit feature decomposition will improve the dose distribution of feature lines so as to obtain better feature pattern. By our simulation using designed test patterns, it showed that the deviation rate of the actual image after taking the new OPC method be 4% less than the existing way.

关 键 词：光学邻近效应校正 特征线条区域划分 图形畸变率 

分 类 号：TN305[电子电信—物理电子学]