MCs^+ -SIMS技术及其应用  

MCs^+ -SIMS Technique and its Applications

作　　者：岳瑞峰[1] 王佑祥[2,3] 陈新[2,3] 陈春华 徐传骧[1] 

机构地区：[1]西安交通大学电气绝缘研究所 [2]中国科学院表面物理国家重点实验室,北京100080 [3]中国科学院半导体研究所,北京100083

出　　处：《真空科学与技术》1997年第3期198-205,共8页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：强烈的基体效应一直是造成二次离子质谱（SIMS）难以定量分析和解释的主要原因。受其影响，常规SIMS，即M±－SIMS（检测原子型二次离子M＋或M－，M是要分析的元素）的适用范围受到了很大的限制。近几年来，上述状况已经通过一种新技术开发得到明显改善，这就是MCS＋－SIMS技术，即在CS＋一次离子轰击下检测分子型二次离子MCS＋而不是M±。由于该技术能明显减小甚至消除基体效应，从而开辟了SIMS定量分析的新途径。在综述MCS＋－SIMS技术的由来、发展、特点和应用以及MCS＋的生成机理的基础上，介绍了该技术的扩展思路。The severe matrix effect is always the main cause of the difficulty in the quantification and interpretation of secondary ion mass spectrometry (SIMS) analysis. Under its influence,the usefulness of the conventional SIMS,i. e. M±-SIMS (detection of M+ or M- atomic secondary ions,M is the element to be analyzed),is limited. ln recent years,the aforementioned states have been obviously improved by developing a new kind of technique: MCs+-SIMS,i. e. detection of MCS+ molecular secondary ions instead of respective M± atomic species under CS+ primary ion bombardment. Being able to significantly reduce or eveneliminate the matrix effect,the technique provides a new way for the quantitative SIMS analysis. In this review,The origin,development,characteristics and applications of MCs+ -SIMS technique and the formation mechanisms of the MCS+ molecular secondary ions are described,and the extension methodology of this technique is introduced as well.

关 键 词：二次离子质谱 铯化物离子 定量分析 基体效应 

分 类 号：O657.6[理学—分析化学] TH838.4[理学—化学]