SrBi_2Ta_2O_9铁电薄膜微结构及其抗疲劳等铁电特性的研究  

MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi 2Ta 2O 9 FERROELECTRIC THIN FILMS

作　　者：杨平雄[1] 邓红梅[1] 郑立荣[1] 林成鲁[1] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室

出　　处：《物理学报》1997年第7期1449-1450,共2页Acta Physica Sinica

摘　　要：在低温Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上用脉冲准分子激光沉积技术结合氧气氛下７００℃退火获得高质量的ＳＢＴ薄膜，其择优取向为（００８）和（１１５）．薄膜厚度约为２００ｎｍ．铁电性能测试显示较饱和的、方形的电滞回线，其剩余极化和矫顽电场分别为１０μＣ／ｃｍ２和５７ｋＶ／ｃｍ，在１０１０次开关极化后没有显示任何疲劳，在５Ｖ直流电压下的漏电流密度约为４×１０－８Ａ／ｃｍ２，直流击穿电场约为２５０ｋＶ／ｃｍ．Abstract High quality SrBi 2Ta 2O 9 thin films on Pt/Ti/SiO 2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700℃ in oxygen. The high diffraction peak of(008) and (115) was characterized by X ray diffractometer.Good ferroelectric properties were obtained from the thin films;the remnant polarization and coercive field were about 10μC/cm 2 and 57kV/cm, respectively. No fatigue was observed at up to 10 10 switching cycles.Leakage current and the dc breakdown field measurement were about 4×10 -8 A/cm 2 at 5V and 250kV/cm,respectively.

关 键 词：SBT薄膜 微结构 疲劳 铁电特性 铁电材料 薄膜 

分 类 号：TM220.14[一般工业技术—材料科学与工程]