硒化法制备铜铟铝硒薄膜及其性能研究(英文)  

Investigation of CuIn_(1-x)Al_xSe_2 Thin Film for Solar Cells Prepared by a Selenization Process

作　　者：向华[1] 庄大明[1] 张弓[1] 李春雷[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《中山大学学报（自然科学版）》2007年第B06期179-180,共2页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家高技术研究发展计划(863计划)资助项目(2004AA513023)

摘　　要：采用中频交流磁控溅射方法制备了CIA前驱膜,并采用固态硒化法进行处理,获得了CIAS吸收层薄膜。采用SEM和XRD观察和分析了薄膜的成分、组织结构和表面形貌。结果表明,通过调节CIA前驱膜的Al含量可制备得到Cu/(In+Al)原子比接近1,且Al/(In+Al)比例可调的CIAS薄膜。CIAS薄膜由Cu(In1-xAlx)Se2固溶体相组成,Al主要是以替代In的固溶形式存在。CuInAl （CIA） films as precursors for CIAS were prepared using middle frequency A. C. magnetron sputtering and CIAS absorbers were obtained by selenization. SEM and XRD were used to observe and analyze the compositions, microstruetures, and surface morphologies of the films. The results show that the CIAS absorber films with a Cu/（ In ＋ A1） atomic ratio of approaching 1 and an adjustable AI/（ In ＋ A1） ratio could be obtained by adjusting A1 concentration in CIA precursors. CIAS obtained in the work is composed of Cu（Inl-xAlx） Se2 phase. A1 exists mainly in solid solution by substituting In.

关 键 词：太阳能电池 CIAS 磁控溅射 前驱膜 硒化 

分 类 号：TM615[电气工程—电力系统及自动化]