倒筒式射频溅射自偏压对Ba_(0.65)Sr_(0.35)TiO_3热释电薄膜结构及性能的影响  

Influence of target self-bias in inverted cylindrical RF sputtering on the microstructure and electrical properties of Ba_(0.65)Sr_(0.35)TiO_3 thin films

作　　者：刘祚麟[1] 吴传贵[1] 张万里[1] 李言荣[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《功能材料》2007年第3期348-350,353,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(513102)

摘　　要：采用倒筒式射频溅射方法,在Pt/Ti/SiO2/Si基片上制备了Ba0.65Sr0.35TiO3(简称BST)薄膜。研究了自偏压对BST薄膜结构及电学性能的影响。在较高自偏压下制备的BST薄膜具有高度的(100)择优取向,且结晶性好,表面平整,耐压能力强。在25℃时薄膜的热释电系数高达6.73×10-7C/(cm2.K)。红外单元探测器在30Hz下的探测率D*为4.93×107cm.Hz1/2/W。研究结果表明,利用倒筒式射频溅射方法,适当提高自偏压,可以制备出热释电性能优良的BST薄膜。Ba0. 65 Sr0. 35TiO3 （BST） thin films were deposited on Pt/Ti/SiO2/Si substrates by inverted cylindrical RF sputtering. The influence of target self-bias voltage on the microstructure and electrical properties of sputtered BST films was investigated. Deposited at high target self-bias voltage, the BST thin films are highly （100）-orientation, and have smooth surface, excellent crystallinity and good withstand voltage properties. The pyroelectric coefficients of BST thin films are 6.73×10^-7C/（cm^2·K） at 25℃ and at 12V/μm. A detectivity D＊ of 4.93×10^7cm. Hz^1/2/W is obtained at room temperature and at 30Hz by the infrared detectors. Our results reveal that high pyroelectric property of BST thin film could be achievable using inverted cylindrical RF sputtering with high target self-bias voltage.

关 键 词：BST 倒筒式 射频溅射 热释电系数 探测率 

分 类 号：O48[理学—固体物理] O53[理学—物理]