络合剂对化学水浴沉积ZnS薄膜的影响  

The influence of some complexing agents upon chemical bath depositing ZnS thin films

作　　者：刘琪[1] 冒国兵[1] 敖建平[2] 

机构地区：[1]安徽工程科技学院机械系,安徽芜湖241000 [2]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《功能材料》2007年第3期382-385,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2004AA513021);安徽省高等学校青年教师科研资助项目(2006jq1151);安徽省教育厅自然科学基金(2006KJ276B)

摘　　要：采用不同络合剂化学水浴沉积ZnS薄膜,应用台阶仪、SEM、XRD、波谱仪等手段测定了ZnS薄膜的厚度、表面、物相结构及透过率等。结果表明,氨水体系沉积薄膜速度明显慢于另外两种体系,沉积的ZnS薄膜都为立方结构。柠檬酸钠体系沉积的ZnS薄膜结晶和透过率最佳,但薄膜表面缺陷较多;氨水-联氨体系沉积的ZnS薄膜表面质量最佳,结晶和透过率也较好;氨水体系沉积的ZnS薄膜质量较差。用3种体系沉积的ZnS薄膜用于制备铜铟镓硒Cu(In,Ga)Se2太阳电池,氨水和氨水-联氨体系沉积的ZnS薄膜制备的电池转换效率明显高于柠檬酸钠体系沉积的ZnS制备的太阳电池。The influence of ammonium hydroxide （NH4OH）, ammonium hydroxide-hydrazine monohydrate （NH40H-N2H4·H2O）,tri-sodium citrate as complexing agents upon structure and surface quality of chemical bath deposition of ZnS thin films were studied and discussed. The micrographs, phase status and transmission spectra of the films were characterized by SEM, XRD and spectrum instrument. The results show that the films are cubic ZnS structure. The growth rate of the ZnS thin films which deposited with NH4OH as complexing agents was lowest. The micrograph of the ZnS thin films which deposited with NH4OH-N2H4 ·H2O as complexing agents was best, but the transmission of films with tri-sodium citrate as complexing agents was best. The CIGS solar cells with ZnS thin films which deposited with different complexing agents have been fabricated and compared.

关 键 词：化学水浴沉积(CBD) 络合剂 ZNS薄膜 Cu(In Ga)Se2太阳电 

分 类 号：TK511.4[动力工程及工程热物理—热能工程]