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作 者:顾广瑞[1] 吴宝嘉[1] 金逢锡[1] 金哲[1] 李哲奎[1]
出 处:《液晶与显示》2007年第5期535-540,共6页Chinese Journal of Liquid Crystals and Displays
摘 要:利用石英管型微波等离子体化学气相沉积装置,在Si基板上制备了具有纳米针状结构的碳膜。场发射特性测试表明,纳米针状结构碳膜具有良好的场发射特性,阈值电场为2.2V/μm,外加电场为9V/μm时,电流密度达到65mA/cm2。利用统计效应修改了Fowler-Nordheim(F-N)模型,成功地解释了在低电场区域的场发射机理。但是利用修改的F-N模型,不能解释高电场区域的电流密度的饱和现象,这将有待于进一步研究。Nano-needle carbon films were Good field emission properties with prepared on Si substrates by quartz-type microwave plasma CVD. a threshold field of 2.2 V/μm and a current density of 65 mA/cm^2 at an electric field of 9 V/μm were obtained from this carbon films. A modified F-N model considering statistical effects were proposed to explain field emission data in the low electric field region. A saturation tendency of current density was found in high electric field region, it could not be explained by modified F-N model. This is awaited to more study.
关 键 词:场发射 碳膜 纳米针 微波等离子体化学气相沉积
分 类 号:TN873.95[电子电信—信息与通信工程]
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