低真空下射频磁控溅射法制备ITO薄膜(英文)  

Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering Under Low Vacuum Level

作　　者：李晓冬[1] 朱红兵[1] 褚家宝[1] 黄士勇[1] 孙卓[1] 陈奕卫[1] 黄素梅[1] 

机构地区：[1]华东师范大学纳光电集成与先进装备教育部工程研究中心,上海200062

出　　处：《液晶与显示》2007年第5期553-559,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：Supported by Foundations of Pujiang Talented Person Plans (No .05PJ14037) ;Nanotechnology of Shanghai Muni-cipal Science & Technology Committee(No .0552nm042) ;Shanghai-Applied Materials Research and Development Fund (No .0519)

摘　　要：在低真空(2.3×10-3Pa)下采用射频磁控溅射法制备了ITO薄膜。溅射温度200℃,溅射气氛为氩气和氧气的混合气,溅射靶材为90%氧化铟、10%氧化锡的陶瓷靶。用场发射扫描电子显微镜和X衍射仪研究了薄膜的显微结构,用X射线光电子能谱表征了薄膜的成分。ITO薄膜在可见光范围内有较高的透射率(80%～95%)。在低工作气压(1Pa)下,氧气流量比率[O2/(O2+Ar)]越小,薄膜的透射率越高、导电性越好。在高工作气压(2Pa)下,制备得到低质量、低透射率的无定形薄膜。Indium tin oxide （ITO） thin films were prepared using radio frequency magnetron sputtering under a quite low vacuum level of 2.3 × 10^-3 Pa. The sputtering was done in an Ar and O2 gas mixture at 200 ℃. A ceramic In2O3 ：SnO2 target （SnO2 mass fraction 10 %） was used. The microstructures of the films were investigated by a field emission scanning electron microscope and an X-ray diffractometer. X-ray photoelectron spectroscopy was performed to characterize the compositions of the films. ITO films with a high transparency in the visible wavelength range （80 %-95 % ） were obtained. At a low working pressure （1 Pa）, the more highly transparent and conductive films were produced at the lower 02 flow ratio. At a high working pressure （2 Pa）, low quality, low transparency and amorphous films were obtained.

关 键 词：氧化铟锡 薄膜 射频磁控溅射 X射线光电子能谱 

分 类 号：O484.1[理学—固体物理]