(Al,Zr)共掺杂ZnO透明导电薄膜的结构以及光电性能研究  

Structural, Optical and Electrical Properties of Al-Zr Codoped ZnO Transparent Conductive Thin Films

作　　者：薛建设[1] 林炜[2] 马瑞新[2] 康勃[2] 吴中亮[2] 

机构地区：[1]北京京东方光电科技有限公司,北京100176 [2]北京科技大学冶金与生态工程学院,北京100083

出　　处：《液晶与显示》2007年第5期560-564,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：北京市科委科技计划资助项目(No.D0306006000091;No.D0304002000021)

摘　　要：用射频磁控溅射法在玻璃衬底上氩气气氛中制备出(Al,Zr)共掺杂的ZnO透明导电薄膜,研究了不同Zr掺杂浓度和薄膜厚度ZnO薄膜的结构、电学和光学特性。结果表明,在最佳沉积条件下我们制备出了具有(002)单一择优取向的多晶六角纤锌矿结构,电阻率为2.2×10-2Ω.cm,且可见光段(320～800nm)平均透过率达到85%的ZnO透明导电薄膜。在150℃的条件下对(Al,Zr)共掺杂的ZnO薄膜进行1h的退火处理,薄膜电阻率降低至8.4×10-3Ω.cm。Zr杂质的掺入改善了薄膜的可见光透光性。The structural features, optical and electrical properties of Al-Zr codoped ZnO thin films deposited by radio frequency （RF） rnagnetron sputtering onto glass substrates was investigated. The films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. 2.2 × 10^-2 Ω·cm of resistivity was prepared at the optimal condition. Zr doping, film thickness and annealing treatment effects on the optical and electrical properties of Al-Zr codoped ZnO thin films were investigated. After an annealing process at 150 ℃ in 1 h, Al-Zr codoped ZnO thin films had a drop in resistivity to 8.4 × 10^-3 Ω·cm. All films we obtained show high visible region average transmittance of 85 %.

关 键 词：氧化锌 透明导电薄膜 电阻率 透光率 射频磁控溅射 

分 类 号：O484.4[理学—固体物理]