CVD金刚石薄膜探测器性能研究  

Properties of CVD Diamond Film Detector

作　　者：王兰[1] 欧阳晓平[2] 范如玉[2] 金永杰[1] 张忠兵[2] 潘洪波[2] 刘林月[2] 吕反修[3] 卜忍安[4] 刘德敏[2] 

机构地区：[1]清华大学工程物理系,北京100084 [2]西北核技术研究所,西安710613 [3]北京科技大学材料学院,北京100083 [4]西安交通大学,西安710049

出　　处：《高能物理与核物理》2007年第12期1112-1115,共4页High Energy Physics and Nuclear Physics

基　　金：国家自然科学基金(10675074)资助~~

摘　　要：通过实验测量和理论分析,从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能.结果表明,CVD金刚石薄膜可以制成均匀型结构的探测器;薄膜中的缺陷会降低探测器的电荷收集效率,探测器的电荷收集效率随场强增大而增大直至饱和.已研制的CVD金刚石探测器电荷收集时间可达719ps,在2.5V/μm场强下达到饱和,电荷收集效率达60.5%;晶格散射是影响探测器时间响应的主要因素,选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.The dark current, charge collection efficiency and time response properties of CVD diamond film detectors are studied based on experiments and their theoretic analysis. The results shows： No PN or PIN junctions are needed when preparing diamond detectors; charge collection efficiency of the detector will be reduced by defects in film, and it increases and reaches saturation along with the increasing electric field between the two electrodes. The charge collection time of our diamond film detector is about 719ps, and the charge collection efficiency can reach the saturation value of 60.5% under the electric field of 2.5V/μm. Scattering of the lattice may slow the detector response, so it＇s necessary to improve CVD technology and choose diamond film with big grain size.

关 键 词：CVD金刚石 探测器 电荷收集效率 灵敏度 时间响应 

分 类 号：O484.5[理学—固体物理]