ZnO纳米线阵列的图形化生长  

Patterned growth of ZnO nanowire arrays

作　　者：艾磊[1,2] 方国家[1,2] 刘逆霜[1] 王明军[1] 赵兴中[1] 

机构地区：[1]武汉大学声光材料与器件教育部重点实验室,湖北武汉430072 [2]中国科学院传感技术国家联合重点实验室,上海200050

出　　处：《功能材料》2007年第A01期419-421,共3页Journal of Functional Materials

基　　金：基金项目：湖北省自然科学基金资助项目（2006ABA215）

摘　　要：采用光刻和射频磁控溅射技术在Si衬底上制备了图形化的ZnO种子层薄膜。分别采用气相榆运和水热合成法，制备了最小单元为30μm的图形化的ZnO纳米线阵列。X射线衍射（XRD）分析显示单晶纳米线阵列具有高度的c轴[001]择优取向生长性质，从扫描电子显微镜（SEM）照片看出，阵列图形完整清晰，边缘整齐，纳米线阵列在室温下光致发光（PL）谱线中在380hm左右具有强烈的紫外发射峰，可见光区域发射峰得到了抑制，证明ZnO纳米线阵列氧空位缺陷少，晶体质量高。The patterned ZnO films as the seed layer were fabricated on the Si substrates by optical photolithography and radio frequency magnetron sputtering. The patterned growth ZnO nanowires with a lowest unit of 30μm were synthesized via vapor phase transport and hydrothermal growth, respectively. X-ray diffracation shows the nanowires are single crystal with c-axis [001] preferred orientation. The pattern of ZnO nanowires arrays is clear and the boarder is well ordered from the scanning electron microscopy （SEM） images. The photoluminescence （PL） spectra at room temperature of ZnO nanowires synthesized by two methods exhibit the strong emission at the wavelength 38Ohm, the emissions in visible region were restrained, which indicated the good crystaUity of ZnO nanowires with few oxygen vacancy defects.

关 键 词：ZNO纳米线 光刻 图形化生长 气相输运 水热合成 

分 类 号：TN304.2[电子电信—物理电子学] TQ050.4[化学工程]