二氧化锡纳米线的生长机理研究  

Deposition mechanism of SnO2 nanowires

作　　者：宗福建[1] 李立君[1] 崔晓东[1] 马洪磊[1] 马瑾[1] 张锡健[1] 计峰[1] 肖洪地[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《功能材料》2007年第A07期2662-2665,共4页Journal of Functional Materials

摘　　要：使用水平石英管式电炉，以二氧化锡和石墨的混合物为原材料、高纯氮气为载气，在850℃温度下用直接热蒸发法制备二氧化锡纳米线．衬底硅片的直径为10mm，其上覆盖一层5nm厚的金催化剂．原材料放在石英舟中，离原材料30mm的下风口处放置硅衬底，原材料和硅衬底都放置在石英管的中部电炉的恒温区内．用扫描电子显微镜（SEM）和透射电子显微镜（TEM）观察到二氧化锡的纳米线结构；X射线衍射（XRD）表明二氧化锡纳米线具有四方金红石结构；选区电子衍射（SAED）照片表明二氧化锡纳米线具有完善的晶体结构．不同生长时间下制备样品的扫描电子显微镜和透射电子显微镜照片再现了二氧化锡纳米线的生长过程，该纳米线的生长符合传统的VLS生长机制．SnO2 nanowires were synthesized by directly thermal evaporating of SnO2 and graphite powders at 850℃ under a flow of high-purity N2 as cartier gas. The synthesis process was carried out in a horizontal electronic resistance furnace. A Si substrate （10 mm in diameter） covered with catalyst gold thin film （5nm in thickness） was used as SnO2 nanowires collection. The staring powder was placed on a quartz boat and the substrate was put on the place 30ram away from the staring powder to the downstream. Research by using x-ray diffraction （XRD） indicates that SnO2 nanowires are tetragonal ruffle in structure. Observations by using scanning electron microscopy （SEM） and transmission electron microscopy （TEM） show that SnO2 is of nanowires structure. The selected area electron diffraction （SAED） shows that the nanowires are perfect crystal structure. SEMs of SnO2 nanowires at different deposited times can give the deposition process.

关 键 词：二氧化锡 纳米线 生长机理 

分 类 号：TN304[电子电信—物理电子学]