一种新型反应室的分析与实验  

The analyses and tests for a new chamber

作　　者：尹盛[1] 王敬义[1] 赵亮[1] 赵伯芳[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《功能材料》2007年第A10期4093-4095,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目（10475029）

摘　　要：对振动阴极上粉体的运动分析表明粉粒在阴极表面停留的时间与阴极表面倾斜角、气体反吹速度和粉粒大小等有关，其停留时间可达10min以上。用这种等离子反应室对硅粉刻蚀，可在硅粉流经反应室一次即可刻蚀200nm的表面厚度。这意味着纯化硅粉的任务能一次完成。实验结果表明新反应室比常规反应室具有很大的优点。The motion analysis of particulates on the vibration cathode surface shows that the stop time particulates on the cathode surface is related to cathode inclination, Ar speed and the size of particulates, this stop time could be more than ten minutes. The etching thickness for Si-particulates surface in the new chamber will amount to 200nm at a time, when the particulates pass through the reaction area. This implies finishing purity task for Si at one times. The analyses and tests show the new chamber to have many advantages over the traditional ones.

关 键 词：粉体表面刻蚀 硅粉提纯 振动阴极 

分 类 号：TN304.051[电子电信—物理电子学]