低功耗无源超高频射频识别应答器芯片的射频电路设计与实现  

Design and implement of a RF circuit for low-power passive UHF RFID transponder IC

作　　者：陈力颖[1] 毛陆虹[1] 吴顺华[1] 郑轩[1] 李彦明[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《高技术通讯》2007年第11期1157-1162,共6页Chinese High Technology Letters

基　　金：国家863计划（2006AA04A109）资助项目.

摘　　要：提出了一种符合ISO/IEC18000-6B标准的高性能低功耗无源超高频（UHF）射频识别（RFID）应答器芯片的射频电路。该射频电路除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量。其构成包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等几个主要模块。该射频电路芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,测试结果表明其读取距离大于3m,在915MHzISM频带下工作时其电流小于8μA,该芯片核心面积为300μm×720μm。A high-performance low-power RF circuit for passive UHF RFID transponder IC is presented. It is compatible with ISO/IEC 18000-6B Standard. The circuit has external components except for an antenna. The passive IC＇ s power supply is taken from the energy of the received RF electromagnetic field with the help of a Schottky diode rectifier. The RFID RF circuit includes the main modules of local oscillator, clock generation, power on reset circuit, matching network and backscatter, rectifier, regulator, AM demodulator, and so on. The IC, with the reading distance of more than 3m at the 915MHz ISM band and the total supply current consumption of less than 8μA, was fabricated using Chartered 0.35μm two-poly four-metal CMOS process with Schottky diodes and EEPROM supported. Its core size is 300μm× 720μm.

关 键 词：无源 超高频(UHF)射频识别(RFID)应答器 射频识别(RFID) 低功耗 射频电路 

分 类 号：TN402[电子电信—微电子学与固体电子学]