非晶态碲镉汞薄膜的射频磁控溅射生长及其晶化过程研究  

Studies of Deposition and Crystallization of RF Magnetron Sputtered Amorphous HgCdTe films

作　　者：孔金丞[1] 孔令德[1] 赵俊[1] 张鹏举[1] 李志[1] 李雄军[1] 王善力[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,昆明云南650023

出　　处：《红外技术》2007年第10期559-562,共4页Infrared Technology

基　　金：国家自然科学基金项目(项目编号:60576069)

摘　　要：在玻璃衬底上用射频磁控溅射技术进行了非晶态碲镉汞(a-HgCdTe或a-MCT)薄膜的低温生长,获得了射频磁控溅射生长a-HgCdTe薄膜的"生长窗口"。利用X射线衍射(XRD)技术对所生长的薄膜进行分析研究,a-HgCdTe薄膜的XRD衍射为典型的非晶衍射波包。椭圆偏振光谱研究结果表明,a-HgCdTe薄膜与晶态HgCdTe薄膜的折射率和消光系数均表现出明显的差异,椭圆偏振光谱技术可以作为一种非晶态半导体的结构判定手段。在90℃～215℃范围内对非晶态碲镉汞薄膜进行了真空退火处理研究其晶化过程,其晶化温度在130℃～140℃之间。Amorphous HgCdTe （α-HgCdTe or α-MCT） films on glass substrates had been deposited by RF magnetron sputtering technology. Amorphous structure of HgCdTe films were investigated by XRD technology as well as the ＂growth window＂ of α-HgCdTe was obtained. The spectroellipsometry studies showed that the refractive index n and the extinction coefficient k of α-HgCdTe were quite different from that of crystal HgCdTe films. Crystallization of α-HgCdTe proceeded during the thermal annealing process, the transition of α-HgCdTe into crystal HgCdTe happened when the annealing temperature was higher than 130℃.

关 键 词：非晶态碲镉汞 射频磁控溅射 晶化 

分 类 号：TN213[电子电信—物理电子学]