射频溅射CdTe薄膜结构特性分析  

Structural Analysis of RF Magnetron Sputtered CdTe Films

作　　者：孔令德[1] 孔金丞[1] 赵俊[1] 张鹏举[1] 李雄军[1] 李志[1] 王善力[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650023

出　　处：《红外技术》2007年第11期627-629,共3页Infrared Technology

基　　金：国家自然科学基金(60576069);云南省自然科学基金面上项目(2004E0055M)

摘　　要：采用射频磁控溅射技术在玻璃衬底上沉积了CdTe单层薄膜,实验表明:在室温条件下,通过调节溅射功率和溅射氩气压强,沉积的CdTe薄膜显示了一系列结构形态。研究了无CdTe薄膜沉积、非晶CdTe薄膜沉积、晶化CdTe薄膜沉积的生长条件,并采用卢瑟福散射理论解释了溅射CdTe薄膜生长机制的分子动力学过程。CdTe films deposited onto glass substrates by rf magnetron sputtering were studied. It was observed that when the deposition was performed at a suitable power and Ar air pressure, CdTe films showed a series of different structural properties. The three dash lines were used to describe the three areas of the films without amorphous CdTe films and crystalline CdTe films. The growth dynamic processes was simulated when suitably using Rutherford scatter theory.

关 键 词：射频磁控溅射 非晶CdTe薄膜 XRD 卢瑟福散射理论 

分 类 号：TN213[电子电信—物理电子学]