HgCdTe光伏探测器反偏暗电流机制分析  

Reverse Bias Dark Current Mechanisms Analyses of HgCdTe Photovoltaic Detector

作　　者：田亚芳[1] 余连杰[2] 史衍丽[2] 

机构地区：[1]云南大学物理科学技术学院物理系,云南昆明650091 [2]昆明物理所,云南昆明650223

出　　处：《红外技术》2007年第11期630-633,共4页Infrared Technology

基　　金：云南省培引人才项目资助(2004PY01-30)

摘　　要：HgCdTe光伏探测器在第二代和第三代红外探测器中处于主流地位。如何降低探测器的暗电流直接关系到探测器的噪声和灵敏度,其分析计算方法有多种。运用Synopsys半导体器件模拟软件对HgCdTe pn结各种机制下的反偏暗电流和动态微分电阻进行了模拟计算。计算结果和相关文献报道的结果以及试验测试结果都吻合很好。HgCdTe Photovoltaic Detector is a very important detector for the second and third infrared Focal Plane Array detectors. Dark current of HgCdTe Photovoltaic Detector performance is closely related to it＇s noise and sensitivity. There are many methods to analyze and calculate the dark current of HgCdTe Photovoltaic Detector. Both dark current and dynamic differential resistor of HgCdTe diode detector under the reverse bias were simulated with Synopsys device simulation software. The calculational results were consistent with the reported results of correlative literatures as well as the experimental results very well.

关 键 词：HGCDTE光伏探测器 暗电流 器件模拟 Synopsys软件 

分 类 号：TN213[电子电信—物理电子学]