宽温特性BaTiO_3瓷料的掺杂改性研究  

The Study of Doping Effect on BaTiO_3 with Wide Temperature Properties

作　　者：李玲霞[1] 张平[1] 明翠[1] 李慧灵 

机构地区：[1]天津大学电子信息学院,天津300072 [2]总装备部工程设计研究总院,北京100084

出　　处：《稀有金属材料与工程》2007年第A03期13-16,共4页Rare Metal Materials and Engineering

基　　金：教育部新世纪优秀人才支持计划资助;天津市自然基金(05YFJMJC09300)

摘　　要：研究了MnCO_3掺杂对BaTiO_3基瓷料的改性作用,MnCO_3可以降低烧结温度,Mn^(3+),Mn^(2+)取代部分Ti^(4+),产生的内偏置场对自发极化有稳定作用,使系统的居里温度向高温方向略微移动,适量添加MnCO_3可以提高瓷体密度,损耗减小。B位先驱体掺杂BaTiO_3基X8R介质材料在MnCO_3的进一步掺杂作用下,其工作上限温度可扩展到170℃,实现中温烧结,且具有优良的介电性能:ε>2500,tgδ<0.01,△C/C_(20℃)≤±15%(-55℃～+170℃),ρ_v>1×10^(12)Ω·cm。The effect of doping MnCO3 in BaTiO3-based materials was studied in this paper. Doping MnCO3 could reduce the sintering temperature. When MnCO3 entered into the system, Mn^2＋, Mn^3＋ can partially replace Ti^4＋, and addition agent MnCO3 produced inner bias field to stabilize spontaneous polarization and Curie temperature shifted to high temperature. Proper addition improved the density and decreased loss factor of ceramic. BaTiO3 -based ceramic doping B site precursor could be greatly improved by MnCO3, which could achieve following properties： ε〉2500, tgδ〈0.01, △C/C20℃≤±15% （-55 ℃～＋170℃）, ρv 〉1×10^12Ω·cm.

关 键 词：先驱体 内偏置场 介电性能:居里温度 MnCO3 

分 类 号：TQ174.1[化学工程—陶瓷工业]