四象限InGaAs APD探测器的研究  

Research on four-quadrant InGaAs APD photodetector

作　　者：王致远[1] 李发明[1] 刘方楠[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《光通信研究》2007年第6期43-46,共4页Study on Optical Communications

摘　　要：文章中设计的四象限InGaAs雪崩光电二极管(Avalanche Photo Diode,APD)的管芯结构采用正入光式平面型结构,而材料结构采用吸收区、倍增区渐变分离的APD结构,在对响应时间、暗电流和响应度等参数进行计算与分析的基础上,优化了器件结构参数。试验结果表明,其响应时间≤1.5 ns,响应度≥9.5 A/W,暗电流≤40 nA,可靠性设计时使PN结和倍增层均在器件表面以下,可有效抑制器件表面漏电流,提高器件的可靠性。The chip of the four-quadrant InGaAs APD in this paper is designed in a frontal incident planar structure and its ma- terial part is an SAGM APD. On the basis of systematical analysis and calculation of its important parameters, such as response time, dark current and responsivity, the optimized structural and the technological parameters are given. The test results show that its response time is ≤1.5 ns, responsivity ≥9.5 A/W and dark current ≤40 nA. As the PN junction and multiplication layer are set under the surface of the device in the reliability design, the surface leakage current can be effectively restrained and the reliability of the device improved.

关 键 词：InGaAs雪崩光电二极管 吸收区倍增区渐变分离-雪崩光电二极管 光谱响应范围 响应度 暗电流 

分 类 号：TN3[电子电信—物理电子学]