SiGe薄膜材料的椭圆偏振光谱研究  

A Study on Spectroscopic Ellipsometry of SiGe Films

作　　者：李秋俊[1] 冯世娟[1] 田岗纪之[2] 财满镇明[2] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]日本名古屋大学工学研究科结晶材料专攻

出　　处：《压电与声光》2007年第6期632-633,637,共3页Piezoelectrics & Acoustooptics

摘　　要：采用椭圆偏振光谱(SE)对一系列SiGe样品进行了研究。确定了SixGe1-x层的厚度和组分;对不均匀的SixGe1-x层,沿厚度方向进行了组分梯度的研究,其结果与二次离子质谱(SIMS)的测试有较好的一致性;成功地表征了器件级绝缘体上的硅锗(SGOI)样品的各层结构和SixGe1-x层的组分。In this work, Spectroscopic Ellipsometry （SE）, which is a detection technology with atomic-level sensitivity, has been used to investigate a series of SiGe samples. The thickness and composition of SixGe1-x layers are detected simultaneously; The composition gradient of non-uniform SixGe1-x layers is investigated along its thickness, and the result is in good agreement with Secondary Ion Mass Spectrometry（SIMS） test. The respective layer structures and composition of SixGe1-x layers of SGOI samples are characterized successfully.

关 键 词：SIGE 椭圆偏振光谱 组分 厚度 

分 类 号：O484[理学—固体物理]