PLT/PbO铁电薄膜的制备及性能研究  

Preparation and Properties of PLT/PbO Thin Films

作　　者：吴家刚[1] 朱基亮[1] 肖定全[1] 朱建国[1] 谭浚哲[1] 张青磊[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《压电与声光》2007年第6期704-706,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学重点基金资助项目(50132020);国家安全"九七三"计划基金资助项目(Z0601)

摘　　要：采用射频磁控溅射技术,在室温溅射、后续退火条件下,以PbO为过渡层,在Pt(111)/Ti/SiO2/Si(100)衬底上制备出具有完全钙钛矿结构的(Pb0.90La0.10)Ti0.975O3(PLT)铁电薄膜;比较了在Pt(111)/Ti/SiO2/Si(100)衬底上有无PbO过渡层的PLT薄膜的微结构和铁电性能。实验结果表明,在Pt(111)/Ti/SiO2/Si(100)衬底上增加PbO过渡层提高了PLT薄膜的相纯度,并且所制备的PLT/PbO/Pt(111)/Ti/SiO2/Si(100)薄膜具有优良的介电和铁电性能,其剩余极化强度Pr为21.76μC/cm2,室温热释电系数p为2.75×10-8C/cm2.K。（Pb0.90La0.10）Ti0.975O3 （PLT） thin films were prepared by RF magnetron sputtering with a PbO buffer layer at room temperature, subsequently annealed in air. With this method, the PLT thin films with pure perovskite phase were prepared on PbO/Pt（ 111）/Ti/SiO2/Si（100） substrates. The effect of PbO buffer layer on the microstructure and properties of the films was investigated. The experimental results indicated that PbO buffer layer improved the phase purity of PLT thin films. The PLT thin films with a PbO buffer layer possessed better dielectric and ferroelectric properties with larger remnant polarization （Pr = 21.76 μC/cm^2 ）, along with relatively high pyroelectric coefficient at room temperature （p=2.75 × 10^-8 C/cm^2·K）.

关 键 词：(Pb0.90La0.10)Ti0.975O3 铁电薄膜 射频磁控溅射 剩余极化强度 热释电系数 

分 类 号：O484[理学—固体物理]