直流磁控溅射制备铝薄膜的工艺研究  

Process technology for Al thin film deposited by DC magnetron sputtering

作　　者：陈国良[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《真空》2007年第6期39-42,共4页Vacuum

基　　金：国家863计划平板显示重大专项基金(批准号:2005AA303G10);福建省科技重大专项基金(批准号:2004HZ01-2);福建省自然科学基金重点项目(批准号:A0420001)

摘　　要：采用直流磁控溅射方法,以高纯Al为靶材,高纯Ar为溅射气体,在玻璃衬底上成功地制备了铝薄膜,并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明:Al膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态;用扫描电子显微镜对薄膜进行表面形貌的观察,溅射功率为2600 W,溅射气压为0.4 Pa时制备的Al膜较均匀致密。Al thin films were successfully deposited with DC magnetron sputtering process on glass substrates, where the highly pure aluminum was used as target with the argon as sputtering gas.The deposition rate,structure and surface morphology of aluminum thin films were studied.The results showed that the deposition rate increases almost linearly first with increasing sputtering power, then increases slowly. On the other hand, the deposition rate increases with increasing sputtering pressure then decreases since it came to peak. XRD patterns show that all the films deposited are polycrystalline. SEM images of surface morphology show that when the sputtering power is 2600W with pressure 0.4Pa,the Al thin films are uniformly compact.

关 键 词：磁控溅射 铝薄膜 沉积速率 多晶态 表面形貌 

分 类 号：TB43[一般工业技术]