等离子体苯胺聚合膜离子注入层的电阻率  

THE TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY IN THE ION IMPLANTED LAYER OF PLASMA POLYMERIZED ANILINE FILM

作　　者：张铮杨[1] 吴美珍[1] 浦天舒[1] 童志深[1] 

机构地区：[1]中国纺织大学基础部

出　　处：《高分子材料科学与工程》1997年第2期76-79,共4页Polymer Materials Science & Engineering

摘　　要：等离子体苯胺聚合膜经１００ｋｅＶ，５×１０１５Ａｒ＋／ｃｍ２或２４ｋｅＶ，１×１０１６Ｉ＋／ｃｍ２离子注入后，室温电阻率下降１２个数量级。用范德堡（Ｖａｎ－ｄｅｒ－Ｐａｕｗ）法在１７３Ｋ～３０３Ｋ温度范围内，测量了温度对注入层体电阻率的影响。实验表明，注入层内电荷载流子的输运过程可用Ｍｏｔ的可变自由程跳跃（ＶＲＨ）模型给以解释。根据此ＶＲＨ理论得到Ｆｅｒｍｉ能级处的态密度及电荷载流子最可能的跳跃距离。Irradiation of both 100 keV Ar + at a fluence 5×10 15 ions/cm 2 and 24 keV I + at the fluence 1×10 16 ions/cm 2 induced a drop of electrical resistivity at room terperature by twelve orders of magnitude. For exploring the transport mechanism of charge carriers, the temperature dependence of electrical resistivity in the ion implanted layer of plasma polymerized aniline film has been studied. The resistivity in irradiated layer was determined by Van der Pauw′s method over the temperature range from 173 K to 303 K. For both implanted cases, a T 1/4 dependence of resistivity has been observed which is consistent with conduction by variable range hopping model. According to this model, we obtained the density of states at Fermi level and the most possible hopping distance for the charge carriers.

关 键 词：等离子体聚合 离子注入 电阻率 苯胺 聚合膜 

分 类 号：O631.23[理学—高分子化学]