Cu(In_(1-x)Ga_x)Se_2薄膜太阳电池的J-V特性  

J-V Characteristics of Cu(In_(1-x)Ga_x)Se_2 Thin Film Solar Cells

作　　者：何炜瑜[1] 孙云[1] 乔在祥[1] 敖建平[1] 王兴磊[1] 李长健[1] 

机构地区：[1]南开大学光电子薄膜器件与技术天津市重点实验室

出　　处：《Journal of Semiconductors》2007年第12期1941-1944,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2004AA513020)~~

摘　　要：对Cu(In1-xGax)Se2(CIGS)太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数.采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好.对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因.J-V characteristics of Cu（GaxIn1-x）Se2 （CIGS）thin film solar cells are measured and analyzed. The diode satura- tion current density J0 ,diode quality factor A ,series resistance Rs and shunt resistance rsh are deduced using Matlab. The calculated results coincide with the measurement very well. A CIGS cell produced in our laboratories is characterized at different illumination intensities. The calculated characteristic parameters are plotted with the irradiance. The shunt resistance rsh decreases as illumination increases. The increased shunt resistance is most likely one of the reasons for the better performance of CIGS solar cells under week illumination.

关 键 词：Cu(In1-xGax)Se2 太阳电池 并联电阻 晶界势垒 弱光 

分 类 号：TM914.4[电气工程—电力电子与电力传动]