全反射镜结构对AlGaInP发光二极管发光效率的影响  

Influence of an Omni-Directional Reflector on the Luminous Efficiency of AlGaInP Light-Emitting Diodes

作　　者：孙昊[1] 韩军[1] 李建军[1] 邓军[1] 邹德恕[1] 宋小伟[1] 宋欣原[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《Journal of Semiconductors》2007年第12期1952-1956,共5页半导体学报（英文版）

基　　金：北京市科委重点项目(批准号:D404003040221);国家重点基础研究发展规划(批准号:2006CB604902);国家高技术研究发展计划(批准号:2006AA03A121);国家自然科学基金(批准号:60407009);北京市自然科学基金(批准号:4032007);北京工业大学第五届研究生科技基金资助项目~~

摘　　要：采用计算机模拟的方法,计算了SiO2/Al,ITO/Al,SiO2/Au和ITO/Au全方位反射镜结构和分布式布拉格反射镜的反射特性，用PECVD和溅射设备制作了Glass/SiO2/Au结构,用LP-MOCVD生长了DBR结构,并测量了其反射特性,实验与模拟结果基本吻合，从模拟和实验的结果得到,SiO2/AuODR结构在波长为630nm的垂直入射光下反射率很高,达到91%以上。对于不同角度的入射光,SiO2/Au在20°-85°都有很高的反射率,远高于DBR结构的反射率，在实际器件测试中,ODR结构的AlGaInP红光LED比无DBR结构的LED提高了115%,比DBR结构的LED提高了28%。这说明,ODR结构与DBR结构相比可以大幅提高红光LED的出光效率。The reflective spectra of SiO2/A1, ITO/A1,SiO2/Au,and ITO/Au omni-directional reflector （ODR） structure and the distributional Bragg reflector （DBR） are calculated by computer simulation. The DBR is grown by LP-MOCVD,then the glass/SiO2/Au ODR samples are fabricated by PECVD and magnetron sputtering,and finally the reflective spectra of those samples are measured. The experimental results are approximately in agreement with the simulations. The reflectivity of the SiO2/Au ODR is as high as 91% for 630nm normal incidence light. The SiO2/Au reflectivity remains a high value when the incidence light angle changes from 20° to 85°, which is much higher than the reflectivity of DBR. The results from the LED device indicates that light intensity on axis of the LED with ODR structures increases by 115% compared with that of LED without DBR,and increases by 28% compared with that of the LED with DBR. These results show the ODR structure can strongly increase the luminous efficiency of the red LEDs.

关 键 词：全方位反射镜 模拟计算 发光二极管 

分 类 号：TN312.8[电子电信—物理电子学]